mmdt4413 complementary npn / pnp small signal surface mount transistor features ? complementary pair ? one 4401-type npn, one 4403-type pnp ? epitaxial planar die construction ? ideal for low power amplification and switching ? ultra-small surface mount package ? lead free/rohs compliant (note 3) mechanical data ? case: sot-363 ? case material: molded plastic. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? terminal connecti ons: see diagram ? marking information: see page 5 ? ordering & date code information: see page 5 ? weight: 0.006 grams (approximate) a m j l d b c h k f c 1 b 2 e 2 e 1 b 1 c 2 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm note: e1, b1, and c1 = pnp 4403 section, e2, b2, and c2 = npn 4401 section. type marking indicates orientation c 2 b 1 e 1 e 2 b 2 c 1 maximum ratings, total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j , t stg -55 to +150 c maximum ratings, npn 4401 section @t a = 25c unless otherwise specified characteristic symbol npn4401 unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 600 ma maximum ratings, pnp 4403 section @t a = 25c unless otherwise specified characteristic symbol pnp4403 unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -600 ma notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be f ound on our website at http:// www.di odes.com/datas heets/ap02001.pdf. 2. maximum combined dissipation. 3. no purposefully added lead. ds30121 rev. 8 - 2 1 of 5 www.diodes.com mmdt4413 ? diodes incorporated
ds30121 rev. 8 - 2 2 of 5 www.diodes.com mmdt4413 ? diodes incorporated electrical characteristics, npn 4401 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 60 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 ? v i c = 1.0ma, i b = 0 b emitter-base breakdown voltage v (br)ebo 6.0 ? v i e = 100 a, i c = 0 collector cutoff current i cex ? 100 na v ce = 35v, v eb(off) = 0.4v base cutoff current i bl ? 100 na v ce = 35v, v eb(off) = 0.4v on characteristics (note 4) dc current gain h fe 20 40 80 100 40 ? ? ? 300 ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 150ma, v ce = 1.0v i c = 500ma, v ce = 2.0v collector-emitter saturation voltage v ce(sat) ? 0.40 0.75 v i c = 150ma, i b = 15ma b i c = 500ma, i b b = 50ma base-emitter saturation voltage v be(sat) 0.75 ? 0.95 1.2 v i c = 150ma, i b = 15ma b i c = 500ma, i b b = 50ma small signal characteristics output capacitance c cb ? 6.5 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c eb ? 30 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 15 k voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 40 500 ? output admittance h oe 1.0 30 s v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 250 ? mhz v ce = 10v, i c = 20ma, f = 100mhz switching characteristics delay time t d ? 15 ns rise time t r ? 20 ns v cc = 30v, i c = 150ma, v be(off) = 2.0v, i b1 = 15ma storage time t s ? 225 ns fall time t f ? 30 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma electrical characteristics, pnp 4403 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -40 ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 ? v i c = -1.0ma, i b = 0 b emitter-base breakdown voltage v (br)ebo -5.0 ? v i e = -100 a, i c = 0 collector cutoff current i cex ? -100 na v ce = -35v, v eb(off) = -0.4v base cutoff current i bl ? -100 na v ce = -35v, v eb(off) = -0.4v on characteristics (note 4) dc current gain h fe 30 60 100 100 20 ? ? ? 300 ? ? i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -150ma, v ce = -2.0v i c = -500ma, v ce = -2.0v collector-emitter saturation voltage v ce(sat) ? -0.40 -0.75 v i c = -150ma, i b = -15ma b i c = -500ma, i b b = -50ma base-emitter saturation voltage v be(sat) -0.75 ? -0.95 -1.30 v i c = -150ma, i b = -15ma b i c = -500ma, i b b = -50ma small signal characteristics output capacitance c cb ? 8.5 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c eb ? 30 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.5 15 k voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 60 500 ? output admittance h oe 1.0 100 s v ce = -10v, i c = -1.0ma, f = 1.0khz current gain-bandwidth product f t 200 ? mhz v ce = -10v, i c = -20ma, f = 100mhz switching characteristics delay time t d ? 15 ns rise time t r ? 20 ns v cc = -30v, i c = -150ma, v be(off) = -2.0v, i b1 = -15ma storage time t s ? 225 ns fall time t f ? 30 ns v cc = -30v, i c = -150ma, i b1 = i b2 = -15ma notes: 4. short duration pulse test used to minimize self-heating effect.
ds30121 rev. 8 - 2 3 of 5 www.diodes.com mmdt4413 ? diodes incorporated
11 0 100 1000 v, c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 9 collector emitter saturation voltage vs. collector current (4403) c t= 25c a t= -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i i c b = 10 ds30121 rev. 8 - 2 4 of 5 www.diodes.com mmdt4413 ? diodes incorporated
ordering information (note 5) device packaging shipping ds30121 rev. 8 - 2 5 of 5 www.diodes.com mmdt4413 ? diodes incorporated MMDT4413-7-F sot-363 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information k13= product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september data code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code j k l m n p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated.
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